M58LW064A

The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 m Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organised as 4M by 16 bit. The M58LW064B has 4M by 16m bit or 2M by 32 bit organisation selectable by the Word Organisation WORD input. Both devices are internally configured as 64 blocks of 1 Mbit each.

The devices support Asynchronous Random and Latch Enable Controlled Read with Page mode as well as Synchronous Burst Read with a configurablem burst. They also support pipelined synchronous Burst Read. Writing is Asynchronous or Asynchronous Latch Enable Controlled.

The configurable synchronous burst read interface allows a high data transfer rate controlled by the Burst Clock K signal. It is capable of bursting fixed or unlimited lengths of data. The burst type, latency and length are configurable and can be easily adapted to a large variety of system clock frequencies and microprocessors. A 16 Word or 8 Double- Word Write Buffer improves effective programming speed by up to 20 times when data is programmed in full buffer increments. Effective Word programming takes typically 12ms. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks.

Program and Erase operations can be suspended in order to perform either Read or Program in any other block and then resumed. All blocks are protected against spurious programming and erase cycles at power-up. Any block can be separately protected at any time. The block protection bits can also be deleted, this is executed as one sequence for all blocks simultaneously. Block protection can be temporarily disabled. Each block can be programmed and erased over 100,000